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Transmissive Types with Phototransistor Output

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EE-SX298 Photomicrosensor
(Transmissive)

  • General-purpose model with a 3-mm-wide slot.
  • PCB mounting type.
  • High resolution with a 0.5-mm-wide aperture.
  • With a Photo-Darlington transistor as a detector element.
This web page provides an excerpt from a datasheet.
Refer to Datasheetand other applicable documents for more information.
Ratings / CharacteristicsDimensions
Absolute Maximum Ratings (Ta = 25ºC)
Item
Symbol
Rated value
Emitter Forward current IF 50mA (see note 1)
Pulse forward current IFP 1A (see note 2)
Reverse voltage VR 4V
Detector Collector-Emitter voltage VCEO 35V
Emitter-Collector voltage VECO ---
Collector current IC 20mA
Collector dissipation PC 100mW (see note 1)
Ambient temperature Operating Topr -25ºC to 85ºC
Storage Tstg -30ºC to 100ºC
Soldering temperature Tsol 260ºC (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25ºC.

2. The pulse width is 10 µs maximum with a frequency of 100 Hz.

3. Complete soldering within 10 seconds.

Electrical and Optical Characteristics (Ta = 25ºC)
Item
Symbol
Value
Condition
Emitter Forward voltage VF 1.2 V typ.,
1.4 V max.
IF = 20mA
Reverse current IR 0.01µA typ.,
10 µA max.
VR = 4V
Peak emission wavelength λP 940 nm typ. IF = 20mA
Detector Light current IL 0.5 mA min.,
20 mA max.
IF = 1mA,
VCE = 2V
Dark current ID 2 nA typ.,
1,000 nA max.
VCE = 10V,
0×
Leakage current ILEAK --- ---
Collector-Emitter
saturated voltage
VCE (sat) 0.75 V typ.,
1.0 V max.
IF = 2 mA,
IL = 0.5 mA
Peak spectral
sensitivity wavelength
λP 780 nm typ. VCE = 5V
Rising time tr 70 µs typ. VCC = 5V,
RL = 100Ω,
IL = 10mA
Falling time tf 70 µs typ. VCC = 5V,
RL = 100Ω,
IL = 10mA

Ratings / CharacteristicsDimensions
Note: All units are in millimeters unless otherwise indicated.

EE-SX298:Dimensions1

Terminal No.
Name
A Anode
K Cathode
C Collector
E Emitter
Unless otherwise specified, the tolerances are ± 0.2 mm.
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