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Transmissive Types with Phototransistor OutputEE-SX298 Photomicrosensor
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Updated June 23, 2009
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| Item | Symbol |
Rated value |
|
|---|---|---|---|
| Emitter | Forward current | IF | 50mA (see note 1) |
| Pulse forward current | IFP | 1A (see note 2) | |
| Reverse voltage | VR | 4V | |
| Detector | Collector-Emitter voltage | VCEO | 35V |
| Emitter-Collector voltage | VECO | --- | |
| Collector current | IC | 20mA | |
| Collector dissipation | PC | 100mW (see note 1) | |
| Ambient temperature | Operating | Topr | -25ºC to 85ºC |
| Storage | Tstg | -30ºC to 100ºC | |
| Soldering temperature | Tsol | 260ºC (see note 3) | |
| Note: | 1. | Refer to the temperature rating chart if the ambient temperature exceeds 25ºC. |
| 2. | The pulse width is 10 µs maximum with a frequency of 100 Hz. | |
| 3. | Complete soldering within 10 seconds. |
| Item | Symbol |
Value |
Condition |
|
|---|---|---|---|---|
| Emitter | Forward voltage | VF | 1.2 V typ., 1.4 V max. |
IF = 20mA |
| Reverse current | IR | 0.01µA typ., 10 µA max. |
VR = 4V | |
| Peak emission wavelength | λP | 940 nm typ. | IF = 20mA | |
| Detector | Light current | IL | 0.5 mA min., 20 mA max. |
IF = 1mA, VCE = 2V |
| Dark current | ID | 2 nA typ., 1,000 nA max. |
VCE = 10V, 0 |
|
| Leakage current | ILEAK | --- | --- | |
| Collector-Emitter saturated voltage |
VCE (sat) | 0.75 V typ., 1.0 V max. |
IF = 2 mA, IL = 0.5 mA |
|
| Peak spectral sensitivity wavelength |
λP | 780 nm typ. | VCE = 5V | |
| Rising time | tr | 70 µs typ. | VCC = 5V, RL = 100Ω, IL = 10mA |
|
| Falling time | tf | 70 µs typ. | VCC = 5V, RL = 100Ω, IL = 10mA |
|
| Note: All units are in millimeters unless otherwise indicated. |
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Terminal No. |
Name |
|---|---|
| A | Anode |
| K | Cathode |
| C | Collector |
| E | Emitter |

