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Transmissive Types with Phototransistor OutputEE-SX1115 Photomicrosensor
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Updated June 23, 2009
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| Item | Symbol |
Rated value |
|
|---|---|---|---|
| Emitter | Forward current | IF | 50mA (see note 1) |
| Pulse forward current | IFP | 1A (see note 2) | |
| Reverse voltage | VR | 4V | |
| Detector | Collector-Emitter voltage | VCEO | 30V |
| Emitter-Collector voltage | VECO | --- | |
| Collector current | IC | 20mA | |
| Collector dissipation | PC | 100mW (see note 1) | |
| Ambient temperature | Operating | Topr | -25ºC to 85ºC |
| Storage | Tstg | -30ºC to 100ºC | |
| Soldering temperature | Tsol | 260ºC (see note 3) | |
| Note: | 1. | Refer to the temperature rating chart if the ambient temperature exceeds 25ºC. |
| 2. | The pulse width is 10 µs maximum with a frequency of 100 Hz. | |
| 3. | Complete soldering within 10 seconds. |
| Item | Symbol |
Value |
Condition |
|
|---|---|---|---|---|
| Emitter | Forward voltage | VF | 1.2 V typ., 1.5 V max. |
IF = 30mA |
| Reverse current | IR | 0.01µA typ., 10 µA max. |
VR = 4V | |
| Peak emission wavelength | λP | 940 nm typ. | IF = 20mA | |
| Detector | Light current | IL | 0.5 mA min., 14 mA max. |
IF = 20mA, VCE = 10V |
| Dark current | ID | 2 nA typ., 200 nA max. |
VCE = 10V, 0 |
|
| Leakage current | ILEAK | --- | --- | |
| Collector-Emitter saturated voltage |
VCE (sat) | 0.1 V typ., 0.4 V max. |
IF = 20mA, IL = 0.1mA |
|
| Peak spectral sensitivity wavelength |
λP | 850 nm typ. | VCE = 10V | |
| Rising time | tr | 4 µs typ. | VCC = 5V, RL = 100 Ω, IL = 5mA |
|
| Falling time | tf | 4 µs typ. | VCC = 5V, RL = 100 Ω, IL = 5mA |
|
| Note: All units are in millimeters unless otherwise indicated. |
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Terminal No. |
Name |
|---|---|
| A | Anode |
| K | Cathode |
| C | Collector |
| E | Emitter |
Dimensions |
Tolerance |
|---|---|
| 3 mm max. | ± 0.3 |
| 3 < mm ≤ 6 | ± 0.375 |
| 6 < mm ≤ 10 | ± 0.45 |
| 10 < mm ≤ 18 | ± 0.55 |
| 18 < mm ≤ 30 | ± 0.65 |

