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Transmissive Types with Phototransistor OutputEE-SX1035 Photomicrosensor
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Updated June 23, 2009
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| Item | Symbol |
Rated value |
|
|---|---|---|---|
| Emitter | Forward current | IF | 50 mA (see note 1) |
| Pulse forward current | IFP | 1 A (see note 2) |
|
| Reverse voltage | VR | 4 V | |
| Detector | Collector-Emitter voltage | VCEO | 30 V |
| Emitter-Collector voltage | VECO | 5 V | |
| Collector current | IC | 20 mA | |
| Collector dissipation | PC | 100 mW (see note 1) |
|
| Ambient temperature | Operating | Topr | -25ºC to 85ºC |
| Storage | Tstg | -30ºC to 100ºC | |
| Soldering temperature | Tsol | 260ºC (see note 3) |
|
| Note: | 1. | Refer to the temperature rating chart if the ambient temperature exceeds 25ºC. |
| 2. | The pulse width is 10 μs maximum with a frequency of 100 Hz. | |
| 3. | Complete soldering within 10 seconds. |
| Item | Symbol |
Value |
Condition |
|
|---|---|---|---|---|
| Emitter | Forward voltage | VF | 1.2 V typ., 1.5 V max. | IF = 30 mA |
| Reverse current | IR | 0.01 μA typ., 10 μA max. | VR = 4 V | |
| Peak emission wavelength | λP | 940 nm typ. | IF = 20 mA | |
| Detector | Light current | IL | 0.5 mA min. | IF = 20 mA, VCE = 10 V |
| Dark current | ID | 2 nA typ., 200 nA max. | VCE = 10 V,0 |
|
| Leakage current | ILEAK | --- | --- | |
| Collector-Emitter saturated voltage | VCE (sat) | 0.15 V typ., 0.4 V max. | IF = 20 mA, IL = 0.1 mA | |
| Peak spectral sensitivity wavelength | λP | 850 nm typ. | VCE = 10 V | |
| Rising time | tr | 4 μs typ. | VCC = 5 V, RL = 100 Ω, IL = 5 mA | |
| Falling time | tf | 4 μs typ. | VCC = 5 V, RL = 100 Ω, IL = 5 mA | |
| Note: All units are in millimeters unless otherwise indicated. |
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Terminal No. |
Name |
|---|---|
| A | Anode |
| K | Cathode |
| C | Collector |
| E | Emitter |
Dimensions |
Tolerance |
|---|---|
| 3 mm max. | ±0.2 |
| 3 < mm ≤ 6 | ±0.24 |
| 6 < mm ≤ 10 | ±0.29 |
| 10 < mm ≤ 18 | ±0.35 |
| 18 < mm ≤ 30 | ±0.42 |