Photomicrosensor(Reflective) EE-SY1200 | OMRON Electronic Components Web

Absolute Maximum Ratings (Ta = 25ºC)

Item		Symbol	Rated value	Unit
Emitter	Forward current	IF	50*1	mA
	Pulse forward current	IFP	500*2	mA
	Reverse voltage	VR	4	V
Detector	Collector-Emitter voltage	VCEO	30	V
	Emitter-Collector voltage	VECO	5	V
	Collector current	IC	20	mA
	Collector dissipation	PC	50*1	mW
Operating temperature		Topr	−25 to +85	ºC
Storage temperature		Topr	−40 to +100	ºC
Reflow soldering temperature		Topr	240*3	ºC

Note:	1.	Refer to the temperature rating chart if the ambient temperature exceeds 25ºC.
	2.	The pulse width is 10 µs maximum with a frequency of 100 Hz.
	3.	Complete soldering within 10 seconds for reflow soldering.

Electrical and Optical Characteristics (Ta = 25ºC)

Item		Symbol	Value			Unit	Condition
Item		Symbol	MIN.	TYP.	MAX.	Unit	Condition
Emitter	Forward voltage	VF	---	1.2	1.4	V	IF = 20 mA
	Reverse current	IR	---	---	10	μA	VR = 4V
	Peak emission wavelength	λP	---	940	---	nm	---
Detector	Light current1	IL1	200	---	1000	μA	IF = 10 mA, VCE = 2 V, Aluminum-deposited surface, d = 4 mm*1
	Light current2	IL2	150	---	---	μA	IF = 4 mA, VCE = 2 V, Aluminum-de-posited surface, d = 1 mm*1
	Dark current	ID	---	2	200	nA	VCE = 10 V, 0 x
	Leakage current1	ILEAK1	---	---	500	nA	IF = 10 mA,VCE = 2 V with no reflection*2
	Leakage current2	ILEAK2	---	---	200	nA	IF = 4 mA,VCE = 2 V with no reflection*2
	Collector-Emitter saturated voltage	VCE (sat)	---	---	---	V	---
	Peak spectral sensitivity wavelength	λP	---	850	---	nm	---
Rising time		tr	---	30	---	μs	VCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1
Falling time		tf	---	30	---	μs	VCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1

Note:	1.	The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
	2.	Depends on the installed condition of the Photomicrosensor, the detector may receive the sensor's LED light and/or the external light which is reflected from surroundings of the Photomicrosensor and /or the background object. Please confirm the condition of the Photomicrosensor by actual intended application prior to the mass production use.

Note. Unless otherwise specified tolerances are ±0.15.
No burrs dimensions are included in outline dimensions.
The burrs dimensions are 0.15 MAX.
Diagonal line indicate the region is part Au plating area.

Recommended Soldering Pattern
EESY1200:Dimensions

Note 1. The shaded portion in the above figure may cause shorting.
Do not wire in this portion.
2. The dimensional tolerance for the recommended soldering pattern is ±0.1 mm.

EESY1200:Dimensions

Internal Circuit
EESY1200:Dimensions

Terminal No.	Name
A	Anode
K	Cathode
C	Collector
E	Emitter

Reflective

EE-SY1200 Photomicrosensor (Reflective)

EE-SY1200 Photomicrosensor
(Reflective)