EE-SY193 Photomicrosensor (Reflective) Ultra-compact model. PCB surface mounting type.

Absolute Maximum Ratings (Ta = 25ºC)

Item		Symbol	Rated value
Emitter	Forward current	IF	25 mA (see note 1)
	Pulse forward current	IFP	100 mA (see note 2)
	Reverse voltage	VR	6 V
Detector	Collector-Emitter voltage	VCEO	18 V
	Emitter-Collector voltage	VECO	4 V
	Collector current	IC	20 mA
	Collector dissipation	PC	75 mW (see note 1)
Ambient temperature	Operating	Topr	-30ºC to 80ºC
	Storage	Tstg	-40ºC to 85ºC
	Reflow soldering	Tsol	220ºC (see note 3)
	Manual soldering	Tsol	300ºC (see note 3)

Note:	1.	Refer to the temperature rating chart if the ambient temperature exceeds 25ºC.
	2.	Duty: 1/100; Pulse width: 0.1 ms
	3.	Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering.

Electrical and Optical Characteristics (Ta = 25ºC)

Item		Symbol	Value	Condition
Emitter	Forward voltage	VF	1.1 V typ., 1.3 V max.	IF = 4 mA
	Reverse current	IR	10 μA max.	VR = 6 V
	Peak emission wavelength	λP	940 nm typ.	IF = 20 mA
Detector	Light current	IL	100 μA min., 150 μA typ.; 360 μA max.	Aluminum-deposited surface,IF = 4 mA,VCE = 2 V,d = 1 mm (see note)
	Dark current	ID	100 nA max.	VCE = 10 V, 0 x
	Leakage current	ILEAK	1 μA max.	IF = 4 mA,VCE = 2 V
	Collector-Emitter saturated voltage	VCE (sat)	---	---
	Peak spectral sensitivity wavelength	λP	900 nm typ.	---
Rising time		tr	25 μs typ.	VCC = 2 V, RL = 1 kΩ,
Falling time		tf	30 μs typ.	VCC = 2 V, RL = 1 kΩ,

Note:

The letter "d" indicates the distance between the top surface of the sensor and the sensing object.

Note: All units are in millimeters unless otherwise indicated.

Terminal No.	Name
A	Anode
K	Cathode
C	Collector
E	Emitter

Unless otherwise specified, the tolerances are ± 0.2 mm.