EE-SY124 Photomicrosensor (Reflective) Ultra-compact model.

Absolute Maximum Ratings (Ta = 25ºC)

Item		Symbol	Rated value
Emitter	Forward current	IF	50 mA (see note 1)
	Pulse forward current	IFP	1 A (see note 2)
	Reverse voltage	VR	4 V
Detector	Collector-Emitter voltage	VCEO	30 V
	Emitter-Collector voltage	VECO	5 V
	Collector current	IC	20 mA
	Collector dissipation	PC	75 mW (see note 1)
Ambient temperature	Operating	Topr	-25ºC to 85ºC
	Storage	Tstg	-40ºC to 100ºC
Soldering temperature		Tsol	260ºC (see note 3)

Note:	1.	Refer to the temperature rating chart if the ambient temperature exceeds 25ºC.
	2.	The pulse width is 10 μs maximum with a frequency of 100 Hz.
	3.	Complete soldering within 10 seconds.

Electrical and Optical Characteristics (Ta = 25ºC)

Item		Symbol	Value	Condition
Emitter	Forward voltage	VF	1.2 V typ., 1.4 V max.	IF = 20 mA
	Reverse current	IR	0.01 μA typ., 10 μA max.	VR = 4 V
	Peak emission wavelength	λP	950 nm typ.	IF = 4 mA
Detector	Light current	IL	50 μA min., 300 μA max.	IF = 4 mA, VCE = 2 V Aluminum-deposited surface, d = 1 mm (see note)
	Dark current	ID	2 nA typ., 200 nA max.	VCE = 10 V,0 x
	Leakage current	ILEAK	200 nA max.	IF = 4 mA, VCE = 2 V with no reflection
	Collector-Emitter saturated voltage	VCE (sat)	---	---
	Peak spectral sensitivity wavelength	λP	930 nm typ.	VCE = 10 V
Rising time		tr	35 μs typ.	VCC = 2 V, RL = 1 kΩ, IL = 100 μA
Falling time		tf	25 μs typ.	VCC = 2 V, RL = 1 kΩ, IL = 100 μA

Note:

The letter “d” indicates the distance between the top surface of the sensor and the sensing object.

Note: All units are in millimeters unless otherwise indicated.

Terminal No.	Name
A	Anode
K	Cathode
C	Collector
E	Emitter