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Transmissive SX1 series
EE-SX1070 Photomicrosensor (Transmissive)
- Wide model with a 8-mm-wide slot.
- PCB mounting type.
- High resolution with a 0.5-mm-wide aperture.
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Absolute Maximum Ratings (Ta = 25ºC)
| Item |
Symbol |
Rated value |
| Emitter |
Forward current |
IF |
50mA (see note 1) |
| Pulse forward current |
IFP |
1A (see note 2) |
| Reverse voltage |
VR |
4V |
| Detector |
Collector-Emitter voltage |
VCEO |
30V |
Emitter-Collector voltage |
VECO |
--- |
| Collector current |
IC |
20mA |
Collector dissipation |
PC |
100mW (see note 1) |
| Ambient temperature |
Operating |
Topr |
-25ºC to 95ºC |
| Storage |
Tstg |
-30ºC to 100ºC |
| Soldering temperature |
Tsol |
260ºC (see note 3) |
| Note: |
1. |
Refer to the temperature rating chart if the ambient temperature exceeds 25ºC. |
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2. |
The pulse width is 10 µs maximum with a frequency of 100 Hz. |
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3. |
Complete soldering within 10 seconds. |
Electrical and Optical Characteristics (Ta = 25ºC)
| Item |
Symbol |
Value |
Condition |
| Emitter |
Forward voltage |
VF |
1.2 V typ., 1.5 V max. |
IF = 30mA |
| Reverse current |
IR |
0.01µA typ., 10 µA max. |
VR = 4V |
| Peak emission wavelength |
λP |
940 nm typ. |
IF = 20mA |
| Detector |
Light current |
IL |
0.5 mA min., 14 mA max. |
IF = 20 mA, VCE = 10V |
| Dark current |
ID |
2 nA typ., 200 nA max. |
VCE = 10 V, 0 × |
| Leakage current |
ILEAK |
--- |
--- |
Collector-Emitter saturated voltage |
VCE (sat) |
0.1 V typ., 0.4 V max. |
IF = 20 mA, IL = 0.1mA |
Peak spectral sensitivity wavelength |
λP |
850 nm typ. |
VCE = 10V |
| Rising time |
tr |
4 µs typ. |
VCC = 5V, RL = 100Ω, IL = 5mA |
| Falling time |
tf |
4 µs typ. |
VCC = 5V, RL = 100Ω, IL = 5mA |
Note: All units are in millimeters unless otherwise indicated.
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| Terminal No. |
Name |
| A |
Anode |
| K |
Cathode |
| C |
Collector |
| E |
Emitter |
Unless otherwise specified, the tolerances are as shown below.
| Dimensions |
Tolerance |
| 3 mm max. |
± 0.3 |
| 3 < mm ≤ 6 |
± 0.375 |
| 6 < mm ≤ 10 |
± 0.45 |
| 10 < mm ≤ 18 |
± 0.55 |
| 18 < mm ≤ 30 |
± 0.65 |
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