• High-aspect ratio Si etching • Notch-free etching for SOI "straight-like sidewall" structure

	• Perpendicular etching to the substrate • Miniaturization by reducing the amount of taper ( compared to Wet etching)

•High-aspect ratio Si etching

"Narrow", "Deep", "Straight-like sidewall" Technology enabling high aspect ratio structure • Etching Rate 5-10 µ/min or more • Uniformity within the range of ±4.0% • Selectivity over the mask more than 140(NSG) more than 50(resist) • Directionality 90±1° • Aspect ratio 50

•SOI Notch-free etching

Prevents notch when etching SOI wafer Cross section view (Notch) (Notch-Free) Enabling Notch-Free structure even for multiple widths of lines and spaces.

(Picture quoted by SUMITOMO PRECISION PRODUCTS., Co.Ltd.)

•DRIE Si Taper etching examples

Controllable Etching angle   Angle : Approx.71° Depth : 50um Angle : Approx. 83° Depth : 100um